Influence of doping concentration on the performances of multi-junction solar cell InGaP/InGaAs/Ge

Khadidja Djeriouat, Salim Kerai, Kheireddine Ghaffour

Open source

DOI: 10.11591/ijece.v16i2.pp619-628
Published: 2026-04-01
Container: International Journal of Electrical and Computer Engineering (IJECE)
Publisher: Institute of Advanced Engineering and Science
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.11591/ijece.v16i2.pp619-628,
  title = {Influence of doping concentration on the performances of multi-junction solar cell InGaP/InGaAs/Ge},
  author = {Khadidja Djeriouat and Salim Kerai and Kheireddine Ghaffour},
  year = {2026},
  journal = {International Journal of Electrical and Computer Engineering (IJECE)},
  doi = {10.11591/ijece.v16i2.pp619-628},
  url = {https://doi.org/10.11591/ijece.v16i2.pp619-628}
}

RIS

TY  - JOUR
TI  - Influence of doping concentration on the performances of multi-junction solar cell InGaP/InGaAs/Ge
AU  - Khadidja Djeriouat
AU  - Salim Kerai
AU  - Kheireddine Ghaffour
PY  - 2026
JO  - International Journal of Electrical and Computer Engineering (IJECE)
DO  - 10.11591/ijece.v16i2.pp619-628
UR  - https://doi.org/10.11591/ijece.v16i2.pp619-628
ER  -

APA

Djeriouat, K., Kerai, S., & Ghaffour, K. (2026). Influence of doping concentration on the performances of multi-junction solar cell InGaP/InGaAs/Ge. International Journal of Electrical and Computer Engineering (IJECE). https://doi.org/10.11591/ijece.v16i2.pp619-628

Source records

crossref · retrieved 2026-09-27T10:45:38.070Z