A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications
- DOI
- 10.11591/ijece.v8i5.pp3882-3889
- Published
- 2018-10-01
- Container
- International Journal of Electrical and Computer Engineering (IJECE)
- Publisher
- Institute of Advanced Engineering and Science
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.11591/ijece.v8i5.pp3882-3889,
title = {A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications},
author = {Amine Rachakh and Larbi El Abdellaoui and Jamal Zbitou and Ahmed Errkik and Abdelali Tajmouati and Mohamed Latrach},
year = {2018},
journal = {International Journal of Electrical and Computer Engineering (IJECE)},
doi = {10.11591/ijece.v8i5.pp3882-3889},
url = {https://doi.org/10.11591/ijece.v8i5.pp3882-3889}
}RIS
TY - JOUR TI - A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications AU - Amine Rachakh AU - Larbi El Abdellaoui AU - Jamal Zbitou AU - Ahmed Errkik AU - Abdelali Tajmouati AU - Mohamed Latrach PY - 2018 JO - International Journal of Electrical and Computer Engineering (IJECE) DO - 10.11591/ijece.v8i5.pp3882-3889 UR - https://doi.org/10.11591/ijece.v8i5.pp3882-3889 ER -
APA
Rachakh, A., Abdellaoui, L. E., Zbitou, J., Errkik, A., Tajmouati, A., & Latrach, M. (2018). A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications. International Journal of Electrical and Computer Engineering (IJECE). https://doi.org/10.11591/ijece.v8i5.pp3882-3889
Source records
- crossref · retrieved 2026-09-25T08:52:37.625Z