Anisotropic thermal conductivity of Ge quantum-dot and symmetrically strained Si/Ge superlattices.

Liu WL, Borca-Tasciuc T, Chen G, Liu JL, Wang KL

DOI: 10.1166/jnn.2001.013
Published: 2001 Mar
Container: Journal of nanoscience and nanotechnology
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1166/jnn.2001.013,
  title = {Anisotropic thermal conductivity of Ge quantum-dot and symmetrically strained Si/Ge superlattices.},
  author = {Liu WL and Borca-Tasciuc T and Chen G and Liu JL and Wang KL},
  year = {2001},
  journal = {Journal of nanoscience and nanotechnology},
  doi = {10.1166/jnn.2001.013},
  url = {https://doi.org/10.1166/jnn.2001.013}
}

RIS

TY  - JOUR
TI  - Anisotropic thermal conductivity of Ge quantum-dot and symmetrically strained Si/Ge superlattices.
AU  - Liu WL
AU  - Borca-Tasciuc T
AU  - Chen G
AU  - Liu JL
AU  - Wang KL
PY  - 2001
JO  - Journal of nanoscience and nanotechnology
DO  - 10.1166/jnn.2001.013
UR  - https://doi.org/10.1166/jnn.2001.013
ER  -

APA

WL, L., T, B., G, C., JL, L., & KL, W. (2001). Anisotropic thermal conductivity of Ge quantum-dot and symmetrically strained Si/Ge superlattices.. Journal of nanoscience and nanotechnology. https://doi.org/10.1166/jnn.2001.013

Source records

pubmed · retrieved 2026-09-25T15:25:54.870Z