High-Side nLDMOS Design for Ensuring Breakdown Voltages Over 100 V

Kunsik Sung, Taeyoung Won

Open source

DOI: 10.1166/jnn.2011.4462
Published: 2011-07-01
Container: Journal of Nanoscience and Nanotechnology
Publisher: American Scientific Publishers
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1166/jnn.2011.4462,
  title = {High-Side nLDMOS Design for Ensuring Breakdown Voltages Over 100 V},
  author = {Kunsik Sung and Taeyoung Won},
  year = {2011},
  journal = {Journal of Nanoscience and Nanotechnology},
  doi = {10.1166/jnn.2011.4462},
  url = {https://doi.org/10.1166/jnn.2011.4462}
}

RIS

TY  - JOUR
TI  - High-Side nLDMOS Design for Ensuring Breakdown Voltages Over 100 V
AU  - Kunsik Sung
AU  - Taeyoung Won
PY  - 2011
JO  - Journal of Nanoscience and Nanotechnology
DO  - 10.1166/jnn.2011.4462
UR  - https://doi.org/10.1166/jnn.2011.4462
ER  -

APA

Sung, K., & Won, T. (2011). High-Side nLDMOS Design for Ensuring Breakdown Voltages Over 100 V. Journal of Nanoscience and Nanotechnology. https://doi.org/10.1166/jnn.2011.4462

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crossref · retrieved 2026-09-25T12:44:11.458Z