Impact of drift gap, N-layer, and deep N+ sinker on breakdown voltage and saturation current of lateral double-diffused metal oxide semiconductor transistor.
- DOI
- 10.1166/jnn.2011.4848
- Published
- 2011 Aug
- Container
- Journal of nanoscience and nanotechnology
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1166/jnn.2011.4848,
title = {Impact of drift gap, N-layer, and deep N+ sinker on breakdown voltage and saturation current of lateral double-diffused metal oxide semiconductor transistor.},
author = {Sung K and Won T},
year = {2011},
journal = {Journal of nanoscience and nanotechnology},
doi = {10.1166/jnn.2011.4848},
url = {https://doi.org/10.1166/jnn.2011.4848}
}RIS
TY - JOUR TI - Impact of drift gap, N-layer, and deep N+ sinker on breakdown voltage and saturation current of lateral double-diffused metal oxide semiconductor transistor. AU - Sung K AU - Won T PY - 2011 JO - Journal of nanoscience and nanotechnology DO - 10.1166/jnn.2011.4848 UR - https://doi.org/10.1166/jnn.2011.4848 ER -
APA
K, S., & T, W. (2011). Impact of drift gap, N-layer, and deep N+ sinker on breakdown voltage and saturation current of lateral double-diffused metal oxide semiconductor transistor.. Journal of nanoscience and nanotechnology. https://doi.org/10.1166/jnn.2011.4848
Source records
- pubmed · retrieved 2026-09-25T12:44:05.576Z