Carrier Concentration and Threshold Voltage Variability of Amorphous Oxide Semiconductors Using Vacuum Rapid Thermal Annealing

Joong-Won Shin, Won-Ju Cho

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DOI: 10.1166/jnn.2020.17782
Published: 2020-07-01
Container: Journal of Nanoscience and Nanotechnology
Publisher: American Scientific Publishers
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1166/jnn.2020.17782,
  title = {Carrier Concentration and Threshold Voltage Variability of Amorphous Oxide Semiconductors Using Vacuum Rapid Thermal Annealing},
  author = {Joong-Won Shin and Won-Ju Cho},
  year = {2020},
  journal = {Journal of Nanoscience and Nanotechnology},
  doi = {10.1166/jnn.2020.17782},
  url = {https://doi.org/10.1166/jnn.2020.17782}
}

RIS

TY  - JOUR
TI  - Carrier Concentration and Threshold Voltage Variability of Amorphous Oxide Semiconductors Using Vacuum Rapid Thermal Annealing
AU  - Joong-Won Shin
AU  - Won-Ju Cho
PY  - 2020
JO  - Journal of Nanoscience and Nanotechnology
DO  - 10.1166/jnn.2020.17782
UR  - https://doi.org/10.1166/jnn.2020.17782
ER  -

APA

Shin, J., & Cho, W. (2020). Carrier Concentration and Threshold Voltage Variability of Amorphous Oxide Semiconductors Using Vacuum Rapid Thermal Annealing. Journal of Nanoscience and Nanotechnology. https://doi.org/10.1166/jnn.2020.17782

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crossref · retrieved 2026-11-06T12:46:52.864Z