Line-Edge Roughness on Fin-Field-Effect-Transistor Performance for 7-nm and 5-nm Patterns.

Kim SK

DOI: 10.1166/jnn.2020.18814
Published: 2020 Nov 1
Container: Journal of nanoscience and nanotechnology
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1166/jnn.2020.18814,
  title = {Line-Edge Roughness on Fin-Field-Effect-Transistor Performance for 7-nm and 5-nm Patterns.},
  author = {Kim SK},
  year = {2020},
  journal = {Journal of nanoscience and nanotechnology},
  doi = {10.1166/jnn.2020.18814},
  url = {https://doi.org/10.1166/jnn.2020.18814}
}

RIS

TY  - JOUR
TI  - Line-Edge Roughness on Fin-Field-Effect-Transistor Performance for 7-nm and 5-nm Patterns.
AU  - Kim SK
PY  - 2020
JO  - Journal of nanoscience and nanotechnology
DO  - 10.1166/jnn.2020.18814
UR  - https://doi.org/10.1166/jnn.2020.18814
ER  -

APA

SK, K. (2020). Line-Edge Roughness on Fin-Field-Effect-Transistor Performance for 7-nm and 5-nm Patterns.. Journal of nanoscience and nanotechnology. https://doi.org/10.1166/jnn.2020.18814

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pubmed · retrieved 2026-09-25T08:34:59.819Z