Strained Silicon Technology: Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy

Giancarlo La Penna, Chiara Mancini, Anacleto Proietti, Luca Buccini, Daniele Passeri, Narciso Gambacorti, Jérôme Richy, Marco Rossi

Open source

DOI: 10.1177/00037028241246292
Published: 2024-04-17
Container: Applied Spectroscopy
Publisher: SAGE Publications
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1177/00037028241246292,
  title = {Strained Silicon Technology:  Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy},
  author = {Giancarlo La Penna and Chiara Mancini and Anacleto Proietti and Luca Buccini and Daniele Passeri and Narciso Gambacorti and Jérôme Richy and Marco Rossi},
  year = {2024},
  journal = {Applied Spectroscopy},
  doi = {10.1177/00037028241246292},
  url = {https://doi.org/10.1177/00037028241246292}
}

RIS

TY  - JOUR
TI  - Strained Silicon Technology:  Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy
AU  - Giancarlo La Penna
AU  - Chiara Mancini
AU  - Anacleto Proietti
AU  - Luca Buccini
AU  - Daniele Passeri
AU  - Narciso Gambacorti
AU  - Jérôme Richy
AU  - Marco Rossi
PY  - 2024
JO  - Applied Spectroscopy
DO  - 10.1177/00037028241246292
UR  - https://doi.org/10.1177/00037028241246292
ER  -

APA

Penna, G. L., Mancini, C., Proietti, A., Buccini, L., Passeri, D., Gambacorti, N., Richy, J., & Rossi, M. (2024). Strained Silicon Technology: Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy. Applied Spectroscopy. https://doi.org/10.1177/00037028241246292

Source records

crossref · retrieved 2026-11-10T06:30:13.366Z