Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films.

Sahu BS, Delachat F, Slaoui A, Carrada M, Ferblantier G, Muller D

DOI: 10.1186/1556-276x-6-178
Published: 2011 Feb 28
Container: Nanoscale research letters
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1186/1556-276x-6-178,
  title = {Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films.},
  author = {Sahu BS and Delachat F and Slaoui A and Carrada M and Ferblantier G and Muller D},
  year = {2011},
  journal = {Nanoscale research letters},
  doi = {10.1186/1556-276x-6-178},
  url = {https://doi.org/10.1186/1556-276x-6-178}
}

RIS

TY  - JOUR
TI  - Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films.
AU  - Sahu BS
AU  - Delachat F
AU  - Slaoui A
AU  - Carrada M
AU  - Ferblantier G
AU  - Muller D
PY  - 2011
JO  - Nanoscale research letters
DO  - 10.1186/1556-276x-6-178
UR  - https://doi.org/10.1186/1556-276x-6-178
ER  -

APA

BS, S., F, D., A, S., M, C., G, F., & D, M. (2011). Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films.. Nanoscale research letters. https://doi.org/10.1186/1556-276x-6-178

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pubmed · retrieved 2026-11-10T13:17:39.434Z