RF performances of inductors integrated on localized p+-type porous silicon regions.

Capelle M, Billoué J, Poveda P, Gautier G

DOI: 10.1186/1556-276x-7-523
Published: 2012 Sep 25
Container: Nanoscale research letters
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1186/1556-276x-7-523,
  title = {RF performances of inductors integrated on localized p+-type porous silicon regions.},
  author = {Capelle M and Billoué J and Poveda P and Gautier G},
  year = {2012},
  journal = {Nanoscale research letters},
  doi = {10.1186/1556-276x-7-523},
  url = {https://doi.org/10.1186/1556-276x-7-523}
}

RIS

TY  - JOUR
TI  - RF performances of inductors integrated on localized p+-type porous silicon regions.
AU  - Capelle M
AU  - Billoué J
AU  - Poveda P
AU  - Gautier G
PY  - 2012
JO  - Nanoscale research letters
DO  - 10.1186/1556-276x-7-523
UR  - https://doi.org/10.1186/1556-276x-7-523
ER  -

APA

M, C., J, B., P, P., & G, G. (2012). RF performances of inductors integrated on localized p+-type porous silicon regions.. Nanoscale research letters. https://doi.org/10.1186/1556-276x-7-523

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pubmed · retrieved 2026-11-10T14:27:30.887Z