Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

Reem Al-Saigh, Mourad Baira, Bassem Salem, Bouraoui Ilahi

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DOI: 10.1186/s11671-018-2587-1
Published: 2018-06-07
Container: Nanoscale Research Letters
Publisher: Springer Science and Business Media LLC
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1186/s11671-018-2587-1,
  title = {Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate},
  author = {Reem Al-Saigh and Mourad Baira and Bassem Salem and Bouraoui Ilahi},
  year = {2018},
  journal = {Nanoscale Research Letters},
  doi = {10.1186/s11671-018-2587-1},
  url = {https://doi.org/10.1186/s11671-018-2587-1}
}

RIS

TY  - JOUR
TI  - Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
AU  - Reem Al-Saigh
AU  - Mourad Baira
AU  - Bassem Salem
AU  - Bouraoui Ilahi
PY  - 2018
JO  - Nanoscale Research Letters
DO  - 10.1186/s11671-018-2587-1
UR  - https://doi.org/10.1186/s11671-018-2587-1
ER  -

APA

Al-Saigh, R., Baira, M., Salem, B., & Ilahi, B. (2018). Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate. Nanoscale Research Letters. https://doi.org/10.1186/s11671-018-2587-1

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crossref · retrieved 2026-09-27T10:30:48.507Z