A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts
- DOI
- 10.1186/s11671-019-2879-0
- Published
- 2019-02-04
- Container
- Nanoscale Research Letters
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1186/s11671-019-2879-0,
title = {A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts},
author = {Xi Liu and Zhengliang Xia and Xiaoshi Jin and Jong-Ho Lee},
year = {2019},
journal = {Nanoscale Research Letters},
doi = {10.1186/s11671-019-2879-0},
url = {https://doi.org/10.1186/s11671-019-2879-0}
}RIS
TY - JOUR TI - A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts AU - Xi Liu AU - Zhengliang Xia AU - Xiaoshi Jin AU - Jong-Ho Lee PY - 2019 JO - Nanoscale Research Letters DO - 10.1186/s11671-019-2879-0 UR - https://doi.org/10.1186/s11671-019-2879-0 ER -
APA
Liu, X., Xia, Z., Jin, X., & Lee, J. (2019). A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts. Nanoscale Research Letters. https://doi.org/10.1186/s11671-019-2879-0
Source records
- crossref · retrieved 2026-09-25T18:33:05.813Z