Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection.

Wang Z, Qi Z, Liang L, Qiao M, Li Z, Zhang B

Open source

DOI
10.1186/s11671-019-3017-8
Published
2019 May 28
Container
Nanoscale research letters
Publisher
Not recorded
Open access
yes

Credibility signals

limited evidence Score 45/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1186/s11671-019-3017-8,
  title = {Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection.},
  author = {Wang Z and Qi Z and Liang L and Qiao M and Li Z and Zhang B},
  year = {2019},
  journal = {Nanoscale research letters},
  doi = {10.1186/s11671-019-3017-8},
  url = {https://doi.org/10.1186/s11671-019-3017-8}
}

RIS

TY  - JOUR
TI  - Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection.
AU  - Wang Z
AU  - Qi Z
AU  - Liang L
AU  - Qiao M
AU  - Li Z
AU  - Zhang B
PY  - 2019
JO  - Nanoscale research letters
DO  - 10.1186/s11671-019-3017-8
UR  - https://doi.org/10.1186/s11671-019-3017-8
ER  - 

APA

Z, W., Z, Q., L, L., M, Q., Z, L., & B, Z. (2019). Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection.. Nanoscale research letters. https://doi.org/10.1186/s11671-019-3017-8

Source records