Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

Maolin Zhang, Yufeng Guo, Jun Zhang, Jiafei Yao, Jing Chen

Open source

DOI: 10.1186/s11671-020-03360-7
Published: 2020-06-15
Container: Nanoscale Research Letters
Publisher: Springer Science and Business Media LLC
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1186/s11671-020-03360-7,
  title = {Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness},
  author = {Maolin Zhang and Yufeng Guo and Jun Zhang and Jiafei Yao and Jing Chen},
  year = {2020},
  journal = {Nanoscale Research Letters},
  doi = {10.1186/s11671-020-03360-7},
  url = {https://doi.org/10.1186/s11671-020-03360-7}
}

RIS

TY  - JOUR
TI  - Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
AU  - Maolin Zhang
AU  - Yufeng Guo
AU  - Jun Zhang
AU  - Jiafei Yao
AU  - Jing Chen
PY  - 2020
JO  - Nanoscale Research Letters
DO  - 10.1186/s11671-020-03360-7
UR  - https://doi.org/10.1186/s11671-020-03360-7
ER  -

APA

Zhang, M., Guo, Y., Zhang, J., Yao, J., & Chen, J. (2020). Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness. Nanoscale Research Letters. https://doi.org/10.1186/s11671-020-03360-7

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crossref · retrieved 2026-11-08T04:46:40.712Z