Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process
- DOI
- 10.1186/s11671-020-03437-3
- Published
- 2020-11-11
- Container
- Nanoscale Research Letters
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1186/s11671-020-03437-3,
title = {Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process},
author = {Ruibo Chen and Hongxia Liu and Wenqiang Song and Feibo Du and Hao Zhang and Jikai Zhang and Zhiwei Liu},
year = {2020},
journal = {Nanoscale Research Letters},
doi = {10.1186/s11671-020-03437-3},
url = {https://doi.org/10.1186/s11671-020-03437-3}
}RIS
TY - JOUR TI - Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process AU - Ruibo Chen AU - Hongxia Liu AU - Wenqiang Song AU - Feibo Du AU - Hao Zhang AU - Jikai Zhang AU - Zhiwei Liu PY - 2020 JO - Nanoscale Research Letters DO - 10.1186/s11671-020-03437-3 UR - https://doi.org/10.1186/s11671-020-03437-3 ER -
APA
Chen, R., Liu, H., Song, W., Du, F., Zhang, H., Zhang, J., & Liu, Z. (2020). Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process. Nanoscale Research Letters. https://doi.org/10.1186/s11671-020-03437-3
Source records
- crossref · retrieved 2026-09-25T13:59:10.906Z