Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
- DOI
- 10.1186/s11671-022-03699-z
- Published
- 2022-06-24
- Container
- Nanoscale Research Letters
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1186/s11671-022-03699-z,
title = {Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering},
author = {Muhammad Ismail and Chandreswar Mahata and Myounggon Kang and Sungjun Kim},
year = {2022},
journal = {Nanoscale Research Letters},
doi = {10.1186/s11671-022-03699-z},
url = {https://doi.org/10.1186/s11671-022-03699-z}
}RIS
TY - JOUR TI - Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering AU - Muhammad Ismail AU - Chandreswar Mahata AU - Myounggon Kang AU - Sungjun Kim PY - 2022 JO - Nanoscale Research Letters DO - 10.1186/s11671-022-03699-z UR - https://doi.org/10.1186/s11671-022-03699-z ER -
APA
Ismail, M., Mahata, C., Kang, M., & Kim, S. (2022). Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering. Nanoscale Research Letters. https://doi.org/10.1186/s11671-022-03699-z
Source records
- crossref · retrieved 2026-11-10T18:03:14.113Z