Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress.

Shin W, Lee JY, Kim J, Lee SY, Lee ST

Open source

DOI
10.1186/s11671-024-04081-x
Published
2024 Nov 21
Container
Discover nano
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1186/s11671-024-04081-x,
  title = {Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress.},
  author = {Shin W and Lee JY and Kim J and Lee SY and Lee ST},
  year = {2024},
  journal = {Discover nano},
  doi = {10.1186/s11671-024-04081-x},
  url = {https://doi.org/10.1186/s11671-024-04081-x}
}

RIS

TY  - JOUR
TI  - Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress.
AU  - Shin W
AU  - Lee JY
AU  - Kim J
AU  - Lee SY
AU  - Lee ST
PY  - 2024
JO  - Discover nano
DO  - 10.1186/s11671-024-04081-x
UR  - https://doi.org/10.1186/s11671-024-04081-x
ER  - 

APA

W, S., JY, L., J, K., SY, L., & ST, L. (2024). Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress.. Discover nano. https://doi.org/10.1186/s11671-024-04081-x

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