Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress.
- DOI
- 10.1186/s11671-024-04081-x
- Published
- 2024 Nov 21
- Container
- Discover nano
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1186/s11671-024-04081-x,
title = {Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress.},
author = {Shin W and Lee JY and Kim J and Lee SY and Lee ST},
year = {2024},
journal = {Discover nano},
doi = {10.1186/s11671-024-04081-x},
url = {https://doi.org/10.1186/s11671-024-04081-x}
}RIS
TY - JOUR TI - Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress. AU - Shin W AU - Lee JY AU - Kim J AU - Lee SY AU - Lee ST PY - 2024 JO - Discover nano DO - 10.1186/s11671-024-04081-x UR - https://doi.org/10.1186/s11671-024-04081-x ER -
APA
W, S., JY, L., J, K., SY, L., & ST, L. (2024). Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress.. Discover nano. https://doi.org/10.1186/s11671-024-04081-x