Fluorine surface engineering for V(t) control and memory window boost in HZO FeFET toward high-performance, energy-efficient in-memory computing.

Park K, Lim S, Han S, Choi J, Kim M, Ahn J, Choi C

DOI: 10.1186/s40580-026-00573-x
Published: 2026 Nov 4
Container: Nano convergence
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1186/s40580-026-00573-x,
  title = {Fluorine surface engineering for V(t) control and memory window boost in HZO FeFET toward high-performance, energy-efficient in-memory computing.},
  author = {Park K and Lim S and Han S and Choi J and Kim M and Ahn J and Choi C},
  year = {2026},
  journal = {Nano convergence},
  doi = {10.1186/s40580-026-00573-x},
  url = {https://doi.org/10.1186/s40580-026-00573-x}
}

RIS

TY  - JOUR
TI  - Fluorine surface engineering for V(t) control and memory window boost in HZO FeFET toward high-performance, energy-efficient in-memory computing.
AU  - Park K
AU  - Lim S
AU  - Han S
AU  - Choi J
AU  - Kim M
AU  - Ahn J
AU  - Choi C
PY  - 2026
JO  - Nano convergence
DO  - 10.1186/s40580-026-00573-x
UR  - https://doi.org/10.1186/s40580-026-00573-x
ER  -

APA

K, P., S, L., S, H., J, C., M, K., J, A., & C, C. (2026). Fluorine surface engineering for V(t) control and memory window boost in HZO FeFET toward high-performance, energy-efficient in-memory computing.. Nano convergence. https://doi.org/10.1186/s40580-026-00573-x

Source records

pubmed · retrieved 2026-11-10T13:58:55.392Z