Effect of the surface states on photoluminescence from surface GaN/Al <sub>0.2</sub> Ga <sub>0.8</sub> N quantum wells
- DOI
- 10.1209/0295-5075/87/47007
- Published
- 2009-08-01
- Container
- EPL (Europhysics Letters)
- Publisher
- IOP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1209/0295-5075/87/47007,
title = {Effect of the surface states on photoluminescence from surface GaN/Al
<sub>0.2</sub>
Ga
<sub>0.8</sub>
N quantum wells},
author = {Y. D. Glinka and T. V. Shahbazyan and H. O. Everitt and J. Roberts and P. Rajagopal and J. Cook and E. Piner and K. Linthicum},
year = {2009},
journal = {EPL (Europhysics Letters)},
doi = {10.1209/0295-5075/87/47007},
url = {https://doi.org/10.1209/0295-5075/87/47007}
}RIS
TY - JOUR
TI - Effect of the surface states on photoluminescence from surface GaN/Al
<sub>0.2</sub>
Ga
<sub>0.8</sub>
N quantum wells
AU - Y. D. Glinka
AU - T. V. Shahbazyan
AU - H. O. Everitt
AU - J. Roberts
AU - P. Rajagopal
AU - J. Cook
AU - E. Piner
AU - K. Linthicum
PY - 2009
JO - EPL (Europhysics Letters)
DO - 10.1209/0295-5075/87/47007
UR - https://doi.org/10.1209/0295-5075/87/47007
ER - APA
Glinka, Y. D., Shahbazyan, T. V., Everitt, H. O., Roberts, J., Rajagopal, P., Cook, J., Piner, E., & Linthicum, K. (2009). Effect of the surface states on photoluminescence from surface GaN/Al <sub>0.2</sub> Ga <sub>0.8</sub> N quantum wells. EPL (Europhysics Letters). https://doi.org/10.1209/0295-5075/87/47007
Source records
- crossref · retrieved 2026-09-25T14:42:54.633Z