Observation of the Huygens-principle growth mechanism in sputtered W/Si multilayers

T Salditt, D Lott, T. H Metzger, J Peisl, R Fischer, J Zweck, P Høghøj, O Schärpf, G Vignaud

Open source

DOI: 10.1209/epl/i1996-00270-x
Published: 1996-12-10
Container: Europhysics Letters (EPL)
Publisher: IOP Publishing
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1209/epl/i1996-00270-x,
  title = {Observation of the Huygens-principle growth mechanism in sputtered W/Si multilayers},
  author = {T Salditt and D Lott and T. H Metzger and J Peisl and R Fischer and J Zweck and P Høghøj and O Schärpf and G Vignaud},
  year = {1996},
  journal = {Europhysics Letters (EPL)},
  doi = {10.1209/epl/i1996-00270-x},
  url = {https://doi.org/10.1209/epl/i1996-00270-x}
}

RIS

TY  - JOUR
TI  - Observation of the Huygens-principle growth mechanism in sputtered W/Si multilayers
AU  - T Salditt
AU  - D Lott
AU  - T. H Metzger
AU  - J Peisl
AU  - R Fischer
AU  - J Zweck
AU  - P Høghøj
AU  - O Schärpf
AU  - G Vignaud
PY  - 1996
JO  - Europhysics Letters (EPL)
DO  - 10.1209/epl/i1996-00270-x
UR  - https://doi.org/10.1209/epl/i1996-00270-x
ER  -

APA

Salditt, T., Lott, D., Metzger, T. H., Peisl, J., Fischer, R., Zweck, J., Høghøj, P., Schärpf, O., & Vignaud, G. (1996). Observation of the Huygens-principle growth mechanism in sputtered W/Si multilayers. Europhysics Letters (EPL). https://doi.org/10.1209/epl/i1996-00270-x

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crossref · retrieved 2026-09-25T14:43:50.916Z