Multi-cycle rapid thermal annealing for enhancement of luminescence performance in InGaN/GaN green light-emitting diodes.

Gao M, Samuelson L, Bi Z, Gustafsson A, Hou X, Zhang B

DOI: 10.1364/oe.612052
Published: 2026 Oct 19
Container: Optics express
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1364/oe.612052,
  title = {Multi-cycle rapid thermal annealing for enhancement of luminescence performance in InGaN/GaN green light-emitting diodes.},
  author = {Gao M and Samuelson L and Bi Z and Gustafsson A and Hou X and Zhang B},
  year = {2026},
  journal = {Optics express},
  doi = {10.1364/oe.612052},
  url = {https://doi.org/10.1364/oe.612052}
}

RIS

TY  - JOUR
TI  - Multi-cycle rapid thermal annealing for enhancement of luminescence performance in InGaN/GaN green light-emitting diodes.
AU  - Gao M
AU  - Samuelson L
AU  - Bi Z
AU  - Gustafsson A
AU  - Hou X
AU  - Zhang B
PY  - 2026
JO  - Optics express
DO  - 10.1364/oe.612052
UR  - https://doi.org/10.1364/oe.612052
ER  -

APA

M, G., L, S., Z, B., A, G., X, H., & B, Z. (2026). Multi-cycle rapid thermal annealing for enhancement of luminescence performance in InGaN/GaN green light-emitting diodes.. Optics express. https://doi.org/10.1364/oe.612052

Source records

pubmed · retrieved 2026-11-10T10:29:05.797Z