InGaAsN/GaAs quantum-well-based microlasers improved by PECVD SiO <sub>2</sub> passivation

Veronica Voitovich, Ivan Makhov, Ivan Melnichenko, Maxim Solodovnik, Natalia Kryzhanovskaya, Alexey Zhukov

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DOI: 10.1364/ol.610495
Published: 2026-08-21
Container: Optics Letters
Publisher: Optica Publishing Group
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1364/ol.610495,
  title = {InGaAsN/GaAs quantum-well-based microlasers improved by PECVD SiO
                    <sub>2</sub>
                    passivation},
  author = {Veronica Voitovich and Ivan Makhov and Ivan Melnichenko and Maxim Solodovnik and Natalia Kryzhanovskaya and Alexey Zhukov},
  year = {2026},
  journal = {Optics Letters},
  doi = {10.1364/ol.610495},
  url = {https://doi.org/10.1364/ol.610495}
}

RIS

TY  - JOUR
TI  - InGaAsN/GaAs quantum-well-based microlasers improved by PECVD SiO
                    <sub>2</sub>
                    passivation
AU  - Veronica Voitovich
AU  - Ivan Makhov
AU  - Ivan Melnichenko
AU  - Maxim Solodovnik
AU  - Natalia Kryzhanovskaya
AU  - Alexey Zhukov
PY  - 2026
JO  - Optics Letters
DO  - 10.1364/ol.610495
UR  - https://doi.org/10.1364/ol.610495
ER  -

APA

Voitovich, V., Makhov, I., Melnichenko, I., Solodovnik, M., Kryzhanovskaya, N., & Zhukov, A. (2026). InGaAsN/GaAs quantum-well-based microlasers improved by PECVD SiO <sub>2</sub> passivation. Optics Letters. https://doi.org/10.1364/ol.610495

Source records

crossref · retrieved 2026-09-25T00:56:06.657Z