Quantitative analysis and modeling of line edge roughness in near‐field lithography: toward high pattern quality in nanofabrication

Dandan Han, Changhoon Park, Seonghyeon Oh, Howon Jung, Jae W. Hahn

Open source

DOI: 10.1515/nanoph-2019-0031
Published: 2018-06
Container: Nanophotonics
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1515/nanoph-2019-0031,
  title = {Quantitative analysis and modeling of line edge roughness in near‐field lithography: toward high pattern quality in nanofabrication},
  author = {Dandan Han and Changhoon Park and Seonghyeon Oh and Howon Jung and Jae W. Hahn},
  year = {2018},
  journal = {Nanophotonics},
  doi = {10.1515/nanoph-2019-0031},
  url = {https://doi.org/10.1515/nanoph-2019-0031}
}

RIS

TY  - JOUR
TI  - Quantitative analysis and modeling of line edge roughness in near‐field lithography: toward high pattern quality in nanofabrication
AU  - Dandan Han
AU  - Changhoon Park
AU  - Seonghyeon Oh
AU  - Howon Jung
AU  - Jae W. Hahn
PY  - 2018
JO  - Nanophotonics
DO  - 10.1515/nanoph-2019-0031
UR  - https://doi.org/10.1515/nanoph-2019-0031
ER  -

APA

Han, D., Park, C., Oh, S., Jung, H., & Hahn, J. W. (2018). Quantitative analysis and modeling of line edge roughness in near‐field lithography: toward high pattern quality in nanofabrication. Nanophotonics. https://doi.org/10.1515/nanoph-2019-0031

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crossref · retrieved 2026-09-26T12:34:51.621Z