Radiation Hardness of Digital Pixel Sensor Prototypes in 65 nm CMOS Technology for the ALICE ITS3 Upgrade
- DOI
- 10.17181/5mh4r-v4q20
- Published
- 2023
- Container
- Not recorded
- Publisher
- University of Münster
- Open access
- yes
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BibTeX
@article{allodium:10.17181/5mh4r-v4q20,
title = {Radiation Hardness of Digital Pixel Sensor Prototypes in 65 nm CMOS Technology for the ALICE ITS3 Upgrade},
author = {Tiltmann, Nicolas},
year = {2023},
doi = {10.17181/5mh4r-v4q20},
url = {https://doi.org/10.17181/5mh4r-v4q20}
}RIS
TY - JOUR TI - Radiation Hardness of Digital Pixel Sensor Prototypes in 65 nm CMOS Technology for the ALICE ITS3 Upgrade AU - Tiltmann, Nicolas PY - 2023 DO - 10.17181/5mh4r-v4q20 UR - https://doi.org/10.17181/5mh4r-v4q20 ER -
APA
Nicolas, T. (2023). Radiation Hardness of Digital Pixel Sensor Prototypes in 65 nm CMOS Technology for the ALICE ITS3 Upgrade. https://doi.org/10.17181/5mh4r-v4q20