Barrier Properties of Electroplating Nickel Layer for Copper Metallization in Silicon Solar Cells

You Ren Cheng, Wen Jauh Chen, Keisuke Ohdaira, Koichi Higashimine

Open source

DOI: 10.20964/2018.12.23
Published: 2018-12
Container: International Journal of Electrochemical Science
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.20964/2018.12.23,
  title = {Barrier Properties of Electroplating Nickel Layer for Copper Metallization in Silicon Solar Cells},
  author = {You Ren Cheng and Wen Jauh Chen and Keisuke Ohdaira and Koichi Higashimine},
  year = {2018},
  journal = {International Journal of Electrochemical Science},
  doi = {10.20964/2018.12.23},
  url = {https://doi.org/10.20964/2018.12.23}
}

RIS

TY  - JOUR
TI  - Barrier Properties of Electroplating Nickel Layer for Copper Metallization in Silicon Solar Cells
AU  - You Ren Cheng
AU  - Wen Jauh Chen
AU  - Keisuke Ohdaira
AU  - Koichi Higashimine
PY  - 2018
JO  - International Journal of Electrochemical Science
DO  - 10.20964/2018.12.23
UR  - https://doi.org/10.20964/2018.12.23
ER  -

APA

Cheng, Y. R., Chen, W. J., Ohdaira, K., & Higashimine, K. (2018). Barrier Properties of Electroplating Nickel Layer for Copper Metallization in Silicon Solar Cells. International Journal of Electrochemical Science. https://doi.org/10.20964/2018.12.23

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crossref · retrieved 2026-11-10T06:50:40.269Z