CVD Multilayer Boron Nitride-encapsulated graphene Solution-Gated Field-Effect Transistors for wearable and implantable biosensors
- DOI
- 10.21203/rs.3.rs-11233364/v1
- Published
- 2026-10-30
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- Not recorded
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.21203/rs.3.rs-11233364/v1,
title = {CVD Multilayer Boron Nitride-encapsulated graphene Solution-Gated Field-Effect Transistors for wearable and implantable biosensors},
author = {Carole-Anne Lernoud and Lionel Rousseau and Vincent Bouchiat and Blaise Yvert and Clément Hébert},
year = {2026},
doi = {10.21203/rs.3.rs-11233364/v1},
url = {https://doi.org/10.21203/rs.3.rs-11233364/v1}
}RIS
TY - JOUR TI - CVD Multilayer Boron Nitride-encapsulated graphene Solution-Gated Field-Effect Transistors for wearable and implantable biosensors AU - Carole-Anne Lernoud AU - Lionel Rousseau AU - Vincent Bouchiat AU - Blaise Yvert AU - Clément Hébert PY - 2026 DO - 10.21203/rs.3.rs-11233364/v1 UR - https://doi.org/10.21203/rs.3.rs-11233364/v1 ER -
APA
Lernoud, C., Rousseau, L., Bouchiat, V., Yvert, B., & Hébert, C. (2026). CVD Multilayer Boron Nitride-encapsulated graphene Solution-Gated Field-Effect Transistors for wearable and implantable biosensors. https://doi.org/10.21203/rs.3.rs-11233364/v1
Source records
- crossref · retrieved 2026-11-10T13:52:39.643Z