Study on the Effect of Polishing Pad Layer Structure on Dishing Control in Chemical Mechanical Planarization of Through-Silicon Via Copper Patterned Wafer

Quoc-Phong Pham, Le Nam Quoc Huy

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DOI: 10.21203/rs.3.rs-8492857/v1
Published: 2026-01-13
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Publisher: Springer Science and Business Media LLC
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Cite this work

BibTeX

@article{allodium:10.21203/rs.3.rs-8492857/v1,
  title = {Study on the Effect of Polishing Pad Layer Structure on Dishing Control in Chemical Mechanical Planarization of Through-Silicon Via Copper Patterned Wafer},
  author = {Quoc-Phong Pham and Le Nam Quoc Huy},
  year = {2026},
  doi = {10.21203/rs.3.rs-8492857/v1},
  url = {https://doi.org/10.21203/rs.3.rs-8492857/v1}
}

RIS

TY  - JOUR
TI  - Study on the Effect of Polishing Pad Layer Structure on Dishing Control in Chemical Mechanical Planarization of Through-Silicon Via Copper Patterned Wafer
AU  - Quoc-Phong Pham
AU  - Le Nam Quoc Huy
PY  - 2026
DO  - 10.21203/rs.3.rs-8492857/v1
UR  - https://doi.org/10.21203/rs.3.rs-8492857/v1
ER  -

APA

Pham, Q., & Huy, L. N. Q. (2026). Study on the Effect of Polishing Pad Layer Structure on Dishing Control in Chemical Mechanical Planarization of Through-Silicon Via Copper Patterned Wafer. https://doi.org/10.21203/rs.3.rs-8492857/v1

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crossref · retrieved 2026-11-10T14:07:50.354Z