Three-Dimensional Micro-Scale Characterization of Silicon Carbide devices using the TPA-TCT method

Quintana C, Torres-Muñoz C, Duarte-Campderrós J, Fernández-García M, García-López J, Jimenez-Ramos MdC, Moll M, Montero R, Navarrete E, Rodríguez-Ramos M, Rosich D, Vila I.

Open source

DOI
10.21203/rs.3.rs-9066211/v1
Published
2026-06-24
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Publisher
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Open access
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BibTeX

@article{allodium:10.21203/rs.3.rs-9066211/v1,
  title = {Three-Dimensional Micro-Scale Characterization of Silicon Carbide devices using the TPA-TCT method},
  author = {Quintana C and  Torres-Muñoz C and  Duarte-Campderrós J and  Fernández-García M and  García-López J and  Jimenez-Ramos MdC and  Moll M and  Montero R and  Navarrete E and  Rodríguez-Ramos M and  Rosich D and  Vila I.},
  year = {2026},
  doi = {10.21203/rs.3.rs-9066211/v1},
  url = {https://doi.org/10.21203/rs.3.rs-9066211/v1}
}

RIS

TY  - JOUR
TI  - Three-Dimensional Micro-Scale Characterization of Silicon Carbide devices using the TPA-TCT method
AU  - Quintana C
AU  -  Torres-Muñoz C
AU  -  Duarte-Campderrós J
AU  -  Fernández-García M
AU  -  García-López J
AU  -  Jimenez-Ramos MdC
AU  -  Moll M
AU  -  Montero R
AU  -  Navarrete E
AU  -  Rodríguez-Ramos M
AU  -  Rosich D
AU  -  Vila I.
PY  - 2026
DO  - 10.21203/rs.3.rs-9066211/v1
UR  - https://doi.org/10.21203/rs.3.rs-9066211/v1
ER  - 

APA

C, Q., C, T., J, D., M, F., J, G., MdC, J., M, M., R, M., E, N., M, R., D, R., & I., V. (2026). Three-Dimensional Micro-Scale Characterization of Silicon Carbide devices using the TPA-TCT method. https://doi.org/10.21203/rs.3.rs-9066211/v1

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