Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures
- DOI
- 10.21494/iste.op.2018.0222
- Published
- 2018-02
- Container
- Composants nanoélectroniques
- Publisher
- ISTE Group
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.21494/iste.op.2018.0222,
title = {Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures},
author = {Jiang Cao and Jejune Park and François Triozon and Marco G. Pala and Alessandro Cresti},
year = {2018},
journal = {Composants nanoélectroniques},
doi = {10.21494/iste.op.2018.0222},
url = {https://doi.org/10.21494/iste.op.2018.0222}
}RIS
TY - JOUR TI - Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures AU - Jiang Cao AU - Jejune Park AU - François Triozon AU - Marco G. Pala AU - Alessandro Cresti PY - 2018 JO - Composants nanoélectroniques DO - 10.21494/iste.op.2018.0222 UR - https://doi.org/10.21494/iste.op.2018.0222 ER -
APA
Cao, J., Park, J., Triozon, F., Pala, M. G., & Cresti, A. (2018). Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures. Composants nanoélectroniques. https://doi.org/10.21494/iste.op.2018.0222
Source records
- crossref · retrieved 2026-09-25T22:17:04.589Z