TCAD modeling and simulation of self-limiting oxide growth and boron segregation during vertical silicon nanowire processing
- DOI
- 10.24406/publica-2692
- Published
- 2024
- Container
- Not recorded
- Publisher
- Fraunhofer-Gesellschaft
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.24406/publica-2692,
title = {TCAD modeling and simulation of self-limiting oxide growth and boron segregation during vertical silicon nanowire processing},
author = {Rossi, Chiara and Müller, Jonas and Pichler, Peter and Piotr Michałowski, Paweł and Larrieu, Guilhem and :unav},
year = {2024},
doi = {10.24406/publica-2692},
url = {https://doi.org/10.24406/publica-2692}
}RIS
TY - JOUR TI - TCAD modeling and simulation of self-limiting oxide growth and boron segregation during vertical silicon nanowire processing AU - Rossi, Chiara AU - Müller, Jonas AU - Pichler, Peter AU - Piotr Michałowski, Paweł AU - Larrieu, Guilhem AU - :unav PY - 2024 DO - 10.24406/publica-2692 UR - https://doi.org/10.24406/publica-2692 ER -
APA
Chiara, R., Jonas, M., Peter, P., Paweł, P. M., Guilhem, L., & :unav (2024). TCAD modeling and simulation of self-limiting oxide growth and boron segregation during vertical silicon nanowire processing. https://doi.org/10.24406/publica-2692
Source records
- datacite · retrieved 2026-11-10T14:55:15.877Z