Low-noise and low power CMOS photoreceptor using split-length MOSFET

Jamel Nebhen, Julien Dubois, Sofiene Mansouri, Dominique Ginhac

Open source

DOI: 10.2478/jee-2019-0081
Published: 2019-12-01
Container: Journal of Electrical Engineering
Publisher: Walter de Gruyter GmbH
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.2478/jee-2019-0081,
  title = {Low-noise and low power CMOS photoreceptor using split-length MOSFET},
  author = {Jamel Nebhen and Julien Dubois and Sofiene Mansouri and Dominique Ginhac},
  year = {2019},
  journal = {Journal of Electrical Engineering},
  doi = {10.2478/jee-2019-0081},
  url = {https://doi.org/10.2478/jee-2019-0081}
}

RIS

TY  - JOUR
TI  - Low-noise and low power CMOS photoreceptor using split-length MOSFET
AU  - Jamel Nebhen
AU  - Julien Dubois
AU  - Sofiene Mansouri
AU  - Dominique Ginhac
PY  - 2019
JO  - Journal of Electrical Engineering
DO  - 10.2478/jee-2019-0081
UR  - https://doi.org/10.2478/jee-2019-0081
ER  -

APA

Nebhen, J., Dubois, J., Mansouri, S., & Ginhac, D. (2019). Low-noise and low power CMOS photoreceptor using split-length MOSFET. Journal of Electrical Engineering. https://doi.org/10.2478/jee-2019-0081

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crossref · retrieved 2026-11-10T08:23:14.098Z