Dataset on fabrication and characterization of field-effect phototransistors based on MoS2 monolayers and InAs quantum dot heterostructures for infrared detection
- DOI
- 10.25824/redu/ziliry
- Published
- 2025
- Container
- Not recorded
- Publisher
- Repositório de Dados de Pesquisa da Unicamp
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.25824/redu/ziliry,
title = {Dataset on fabrication and characterization of field-effect phototransistors based on MoS2 monolayers and InAs quantum dot heterostructures for infrared detection},
author = {Pinotti, Luís Francisco and Diniz, José Alexandre},
year = {2025},
doi = {10.25824/redu/ziliry},
url = {https://doi.org/10.25824/redu/ziliry}
}RIS
TY - JOUR TI - Dataset on fabrication and characterization of field-effect phototransistors based on MoS2 monolayers and InAs quantum dot heterostructures for infrared detection AU - Pinotti, Luís Francisco AU - Diniz, José Alexandre PY - 2025 DO - 10.25824/redu/ziliry UR - https://doi.org/10.25824/redu/ziliry ER -
APA
Francisco, P. L., & Alexandre, D. J. (2025). Dataset on fabrication and characterization of field-effect phototransistors based on MoS2 monolayers and InAs quantum dot heterostructures for infrared detection. https://doi.org/10.25824/redu/ziliry
Source records
- datacite · retrieved 2026-11-09T20:40:07.173Z