Evaluation and modeling of SiC MOSFET for high temperature applications

Γεωργίου Αναστάσιος, Georgiou Anastasios

DOI: 10.26233/heallink.tuc.105435
Published: 2026
Container: Not recorded
Publisher: Πολυτεχνείο Κρήτης
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.26233/heallink.tuc.105435,
  title = {Evaluation and modeling of SiC MOSFET for high temperature applications},
  author = {Γεωργίου Αναστάσιος and Georgiou Anastasios},
  year = {2026},
  doi = {10.26233/heallink.tuc.105435},
  url = {https://doi.org/10.26233/heallink.tuc.105435}
}

RIS

TY  - JOUR
TI  - Evaluation and modeling of SiC MOSFET for high temperature applications
AU  - Γεωργίου Αναστάσιος
AU  - Georgiou Anastasios
PY  - 2026
DO  - 10.26233/heallink.tuc.105435
UR  - https://doi.org/10.26233/heallink.tuc.105435
ER  -

APA

Αναστάσιος, Γ., & Anastasios, G. (2026). Evaluation and modeling of SiC MOSFET for high temperature applications. https://doi.org/10.26233/heallink.tuc.105435

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datacite · retrieved 2026-09-26T15:14:44.060Z