Bandgap-Engineered pSi/n-CdₓS₁₋ₓ Heterojunctions: Effect of Composition on Optoelectronic Behavior
- DOI
- 10.26565/2312-4334-2025-4-44
- Published
- 2025-12-08
- Container
- East European Journal of Physics
- Publisher
- V. N. Karazin Kharkiv National University
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.26565/2312-4334-2025-4-44,
title = {Bandgap-Engineered pSi/n-CdₓS₁₋ₓ Heterojunctions: Effect of Composition on Optoelectronic Behavior},
author = {Ibrokhim B. Sapaev and Jamoliddin I. Razzokov and Jo‘shqin Sh. Abdullayev and Dildora A. Qalandarova and Madinabonu Sh. Ibragimova},
year = {2025},
journal = {East European Journal of Physics},
doi = {10.26565/2312-4334-2025-4-44},
url = {https://doi.org/10.26565/2312-4334-2025-4-44}
}RIS
TY - JOUR TI - Bandgap-Engineered pSi/n-CdₓS₁₋ₓ Heterojunctions: Effect of Composition on Optoelectronic Behavior AU - Ibrokhim B. Sapaev AU - Jamoliddin I. Razzokov AU - Jo‘shqin Sh. Abdullayev AU - Dildora A. Qalandarova AU - Madinabonu Sh. Ibragimova PY - 2025 JO - East European Journal of Physics DO - 10.26565/2312-4334-2025-4-44 UR - https://doi.org/10.26565/2312-4334-2025-4-44 ER -
APA
Sapaev, I. B., Razzokov, J. I., Abdullayev, J. S., Qalandarova, D. A., & Ibragimova, M. S. (2025). Bandgap-Engineered pSi/n-CdₓS₁₋ₓ Heterojunctions: Effect of Composition on Optoelectronic Behavior. East European Journal of Physics. https://doi.org/10.26565/2312-4334-2025-4-44
Source records
- crossref · retrieved 2026-11-10T15:56:05.749Z