The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers
- DOI
- 10.26636/jtit.2007.3.821
- Published
- 2007-09-30
- Container
- Journal of Telecommunications and Information Technology
- Publisher
- National Institute of Telecommunications
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.26636/jtit.2007.3.821,
title = {The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers},
author = {Robert Mroczyński and Grzegorz Głuszko and Romuald B. Beck and Andrzej Jakubowski and Michał Ćwil and Piotr Konarski and Patrick Hoffmann and Dieter Schmeißer},
year = {2007},
journal = {Journal of Telecommunications and Information Technology},
doi = {10.26636/jtit.2007.3.821},
url = {https://doi.org/10.26636/jtit.2007.3.821}
}RIS
TY - JOUR TI - The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers AU - Robert Mroczyński AU - Grzegorz Głuszko AU - Romuald B. Beck AU - Andrzej Jakubowski AU - Michał Ćwil AU - Piotr Konarski AU - Patrick Hoffmann AU - Dieter Schmeißer PY - 2007 JO - Journal of Telecommunications and Information Technology DO - 10.26636/jtit.2007.3.821 UR - https://doi.org/10.26636/jtit.2007.3.821 ER -
APA
Mroczyński, R., Głuszko, G., Beck, R. B., Jakubowski, A., Ćwil, M., Konarski, P., Hoffmann, P., & Schmeißer, D. (2007). The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers. Journal of Telecommunications and Information Technology. https://doi.org/10.26636/jtit.2007.3.821
Source records
- crossref · retrieved 2026-09-25T18:31:10.404Z