Thermal and mechanical degradation mechanisms in heterostructural field-effect transistors based on gallium nitride

Vadim M. Minnebaev

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DOI: 10.32362/2500-316x-2025-13-2-57-73
Published: 2025-02-11
Container: Russian Technological Journal
Publisher: RTU MIREA
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.32362/2500-316x-2025-13-2-57-73,
  title = {Thermal and mechanical degradation mechanisms in heterostructural field-effect transistors based on gallium nitride},
  author = {Vadim M. Minnebaev},
  year = {2025},
  journal = {Russian Technological Journal},
  doi = {10.32362/2500-316x-2025-13-2-57-73},
  url = {https://doi.org/10.32362/2500-316x-2025-13-2-57-73}
}

RIS

TY  - JOUR
TI  - Thermal and mechanical degradation mechanisms in heterostructural field-effect transistors based on gallium nitride
AU  - Vadim M. Minnebaev
PY  - 2025
JO  - Russian Technological Journal
DO  - 10.32362/2500-316x-2025-13-2-57-73
UR  - https://doi.org/10.32362/2500-316x-2025-13-2-57-73
ER  -

APA

Minnebaev, V. M. (2025). Thermal and mechanical degradation mechanisms in heterostructural field-effect transistors based on gallium nitride. Russian Technological Journal. https://doi.org/10.32362/2500-316x-2025-13-2-57-73

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crossref · retrieved 2026-11-08T23:45:35.673Z