Effect of Pulse Current and Pre-annealing on Thermal Extrusion of Cu in Through-Silicon via (TSV)

Youjung Kim, Sanghyun Jin, Kimoon Park, Jinhyun Lee, Jae-Hong Lim, Bongyoung Yoo

Open source

DOI: 10.3389/fchem.2020.00771
Published: 2020-10-14
Container: Frontiers in Chemistry
Publisher: Frontiers Media SA
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3389/fchem.2020.00771,
  title = {Effect of Pulse Current and Pre-annealing on Thermal Extrusion of Cu in Through-Silicon via (TSV)},
  author = {Youjung Kim and Sanghyun Jin and Kimoon Park and Jinhyun Lee and Jae-Hong Lim and Bongyoung Yoo},
  year = {2020},
  journal = {Frontiers in Chemistry},
  doi = {10.3389/fchem.2020.00771},
  url = {https://doi.org/10.3389/fchem.2020.00771}
}

RIS

TY  - JOUR
TI  - Effect of Pulse Current and Pre-annealing on Thermal Extrusion of Cu in Through-Silicon via (TSV)
AU  - Youjung Kim
AU  - Sanghyun Jin
AU  - Kimoon Park
AU  - Jinhyun Lee
AU  - Jae-Hong Lim
AU  - Bongyoung Yoo
PY  - 2020
JO  - Frontiers in Chemistry
DO  - 10.3389/fchem.2020.00771
UR  - https://doi.org/10.3389/fchem.2020.00771
ER  -

APA

Kim, Y., Jin, S., Park, K., Lee, J., Lim, J., & Yoo, B. (2020). Effect of Pulse Current and Pre-annealing on Thermal Extrusion of Cu in Through-Silicon via (TSV). Frontiers in Chemistry. https://doi.org/10.3389/fchem.2020.00771

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crossref · retrieved 2026-11-06T14:36:30.698Z