Electrical and magnetic properties of antiferromagnetic semiconductor MnSi(2)N(4) monolayer.

Chen D, Jiang Z, Tang Y, Zhou J, Gu Y, He JJ, Yuan J

DOI: 10.3389/fchem.2022.1103704
Published: 2022
Container: Frontiers in chemistry
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3389/fchem.2022.1103704,
  title = {Electrical and magnetic properties of antiferromagnetic semiconductor MnSi(2)N(4) monolayer.},
  author = {Chen D and Jiang Z and Tang Y and Zhou J and Gu Y and He JJ and Yuan J},
  year = {2022},
  journal = {Frontiers in chemistry},
  doi = {10.3389/fchem.2022.1103704},
  url = {https://doi.org/10.3389/fchem.2022.1103704}
}

RIS

TY  - JOUR
TI  - Electrical and magnetic properties of antiferromagnetic semiconductor MnSi(2)N(4) monolayer.
AU  - Chen D
AU  - Jiang Z
AU  - Tang Y
AU  - Zhou J
AU  - Gu Y
AU  - He JJ
AU  - Yuan J
PY  - 2022
JO  - Frontiers in chemistry
DO  - 10.3389/fchem.2022.1103704
UR  - https://doi.org/10.3389/fchem.2022.1103704
ER  -

APA

D, C., Z, J., Y, T., J, Z., Y, G., JJ, H., & J, Y. (2022). Electrical and magnetic properties of antiferromagnetic semiconductor MnSi(2)N(4) monolayer.. Frontiers in chemistry. https://doi.org/10.3389/fchem.2022.1103704

Source records

pubmed · retrieved 2026-09-25T07:07:30.099Z