Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer

Dongke Chen, Zhengyu Jiang, Ying Tang, Junlei Zhou, Yuzhou Gu, Jing-Jing He, Jiaren Yuan

Open source

DOI: 10.3389/fchem.2022.1103704
Published: 2022-12-08
Container: Frontiers in Chemistry
Publisher: Frontiers Media SA
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3389/fchem.2022.1103704,
  title = {Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer},
  author = {Dongke Chen and Zhengyu Jiang and Ying Tang and Junlei Zhou and Yuzhou Gu and Jing-Jing He and Jiaren Yuan},
  year = {2022},
  journal = {Frontiers in Chemistry},
  doi = {10.3389/fchem.2022.1103704},
  url = {https://doi.org/10.3389/fchem.2022.1103704}
}

RIS

TY  - JOUR
TI  - Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer
AU  - Dongke Chen
AU  - Zhengyu Jiang
AU  - Ying Tang
AU  - Junlei Zhou
AU  - Yuzhou Gu
AU  - Jing-Jing He
AU  - Jiaren Yuan
PY  - 2022
JO  - Frontiers in Chemistry
DO  - 10.3389/fchem.2022.1103704
UR  - https://doi.org/10.3389/fchem.2022.1103704
ER  -

APA

Chen, D., Jiang, Z., Tang, Y., Zhou, J., Gu, Y., He, J., & Yuan, J. (2022). Electrical and magnetic properties of antiferromagnetic semiconductor MnSi2N4 monolayer. Frontiers in Chemistry. https://doi.org/10.3389/fchem.2022.1103704

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crossref · retrieved 2026-11-03T15:05:54.806Z