Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design
- DOI
- 10.3390/jlpea1020277
- Published
- 2011-07-08
- Container
- Journal of Low Power Electronics and Applications
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/jlpea1020277,
title = {Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design},
author = {Ramesh Vaddi and Rajendra P. Agarwal and Sudeb Dasgupta and Tony T. Kim},
year = {2011},
journal = {Journal of Low Power Electronics and Applications},
doi = {10.3390/jlpea1020277},
url = {https://doi.org/10.3390/jlpea1020277}
}RIS
TY - JOUR TI - Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design AU - Ramesh Vaddi AU - Rajendra P. Agarwal AU - Sudeb Dasgupta AU - Tony T. Kim PY - 2011 JO - Journal of Low Power Electronics and Applications DO - 10.3390/jlpea1020277 UR - https://doi.org/10.3390/jlpea1020277 ER -
APA
Vaddi, R., Agarwal, R. P., Dasgupta, S., & Kim, T. T. (2011). Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design. Journal of Low Power Electronics and Applications. https://doi.org/10.3390/jlpea1020277
Source records
- crossref · retrieved 2026-11-08T19:28:52.971Z