Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes.

Chen SW, Li H, Chang CJ, Lu TC

Open source

DOI
10.3390/ma10020113
Published
2017 Jan 28
Container
Materials (Basel, Switzerland)
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/ma10020113,
  title = {Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes.},
  author = {Chen SW and Li H and Chang CJ and Lu TC},
  year = {2017},
  journal = {Materials (Basel, Switzerland)},
  doi = {10.3390/ma10020113},
  url = {https://doi.org/10.3390/ma10020113}
}

RIS

TY  - JOUR
TI  - Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes.
AU  - Chen SW
AU  - Li H
AU  - Chang CJ
AU  - Lu TC
PY  - 2017
JO  - Materials (Basel, Switzerland)
DO  - 10.3390/ma10020113
UR  - https://doi.org/10.3390/ma10020113
ER  - 

APA

SW, C., H, L., CJ, C., & TC, L. (2017). Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma10020113

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