In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition.

Lai Y, Xia L, Xu Q, Li Q, Liu K, Yang M, Zhang S, Han M, Goto T, Zhang L, Tu R

Open source

DOI
10.3390/ma13020410
Published
2020 Jan 15
Container
Materials (Basel, Switzerland)
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/ma13020410,
  title = {In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition.},
  author = {Lai Y and Xia L and Xu Q and Li Q and Liu K and Yang M and Zhang S and Han M and Goto T and Zhang L and Tu R},
  year = {2020},
  journal = {Materials (Basel, Switzerland)},
  doi = {10.3390/ma13020410},
  url = {https://doi.org/10.3390/ma13020410}
}

RIS

TY  - JOUR
TI  - In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition.
AU  - Lai Y
AU  - Xia L
AU  - Xu Q
AU  - Li Q
AU  - Liu K
AU  - Yang M
AU  - Zhang S
AU  - Han M
AU  - Goto T
AU  - Zhang L
AU  - Tu R
PY  - 2020
JO  - Materials (Basel, Switzerland)
DO  - 10.3390/ma13020410
UR  - https://doi.org/10.3390/ma13020410
ER  - 

APA

Y, L., L, X., Q, X., Q, L., K, L., M, Y., S, Z., M, H., T, G., L, Z., & R, T. (2020). In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma13020410

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