Characterization of SiO(2) Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas.

Cho C, You K, Kim S, Lee Y, Lee J, You S

DOI: 10.3390/ma14175036
Published: 2021 Sep 3
Container: Materials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/ma14175036,
  title = {Characterization of SiO(2) Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas.},
  author = {Cho C and You K and Kim S and Lee Y and Lee J and You S},
  year = {2021},
  journal = {Materials (Basel, Switzerland)},
  doi = {10.3390/ma14175036},
  url = {https://doi.org/10.3390/ma14175036}
}

RIS

TY  - JOUR
TI  - Characterization of SiO(2) Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas.
AU  - Cho C
AU  - You K
AU  - Kim S
AU  - Lee Y
AU  - Lee J
AU  - You S
PY  - 2021
JO  - Materials (Basel, Switzerland)
DO  - 10.3390/ma14175036
UR  - https://doi.org/10.3390/ma14175036
ER  -

APA

C, C., K, Y., S, K., Y, L., J, L., & S, Y. (2021). Characterization of SiO(2) Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma14175036

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pubmed · retrieved 2026-09-25T00:11:21.971Z