Investigating the Behavior of Thin-Film Formation over Time as a Function of Precursor Concentration and Gas Residence Time in Nitrogen Dielectric Barrier Discharge.

Fotouhiardakani F, Destrieux A, Profili J, Laurent M, Ravichandran S, Dorairaju G, Laroche G

Open source

DOI
10.3390/ma17040875
Published
2024 Feb 14
Container
Materials (Basel, Switzerland)
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/ma17040875,
  title = {Investigating the Behavior of Thin-Film Formation over Time as a Function of Precursor Concentration and Gas Residence Time in Nitrogen Dielectric Barrier Discharge.},
  author = {Fotouhiardakani F and Destrieux A and Profili J and Laurent M and Ravichandran S and Dorairaju G and Laroche G},
  year = {2024},
  journal = {Materials (Basel, Switzerland)},
  doi = {10.3390/ma17040875},
  url = {https://doi.org/10.3390/ma17040875}
}

RIS

TY  - JOUR
TI  - Investigating the Behavior of Thin-Film Formation over Time as a Function of Precursor Concentration and Gas Residence Time in Nitrogen Dielectric Barrier Discharge.
AU  - Fotouhiardakani F
AU  - Destrieux A
AU  - Profili J
AU  - Laurent M
AU  - Ravichandran S
AU  - Dorairaju G
AU  - Laroche G
PY  - 2024
JO  - Materials (Basel, Switzerland)
DO  - 10.3390/ma17040875
UR  - https://doi.org/10.3390/ma17040875
ER  - 

APA

F, F., A, D., J, P., M, L., S, R., G, D., & G, L. (2024). Investigating the Behavior of Thin-Film Formation over Time as a Function of Precursor Concentration and Gas Residence Time in Nitrogen Dielectric Barrier Discharge.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma17040875

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