E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate.

Liang W, Wei W, Han D, Ming M, Zhang J, Wang Z, Zhang X, Wang T, Zhang J

DOI: 10.3390/ma17081916
Published: 2024 Apr 21
Container: Materials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/ma17081916,
  title = {E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate.},
  author = {Liang W and Wei W and Han D and Ming M and Zhang J and Wang Z and Zhang X and Wang T and Zhang J},
  year = {2024},
  journal = {Materials (Basel, Switzerland)},
  doi = {10.3390/ma17081916},
  url = {https://doi.org/10.3390/ma17081916}
}

RIS

TY  - JOUR
TI  - E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate.
AU  - Liang W
AU  - Wei W
AU  - Han D
AU  - Ming M
AU  - Zhang J
AU  - Wang Z
AU  - Zhang X
AU  - Wang T
AU  - Zhang J
PY  - 2024
JO  - Materials (Basel, Switzerland)
DO  - 10.3390/ma17081916
UR  - https://doi.org/10.3390/ma17081916
ER  -

APA

W, L., W, W., D, H., M, M., J, Z., Z, W., X, Z., T, W., & J, Z. (2024). E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma17081916

Source records

pubmed · retrieved 2026-09-25T08:03:07.960Z