The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices.
- DOI
- 10.3390/ma18204681
- Published
- 2025 Oct 12
- Container
- Materials (Basel, Switzerland)
- Publisher
- Not recorded
- Open access
- yes
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BibTeX
@article{allodium:10.3390/ma18204681,
title = {The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices.},
author = {Espiari A and Padberg H and Kiehn A and Schnieders K and Zhang J and Mussler G and Wiefels S and Jalil AR and Grützmacher D},
year = {2025},
journal = {Materials (Basel, Switzerland)},
doi = {10.3390/ma18204681},
url = {https://doi.org/10.3390/ma18204681}
}RIS
TY - JOUR TI - The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices. AU - Espiari A AU - Padberg H AU - Kiehn A AU - Schnieders K AU - Zhang J AU - Mussler G AU - Wiefels S AU - Jalil AR AU - Grützmacher D PY - 2025 JO - Materials (Basel, Switzerland) DO - 10.3390/ma18204681 UR - https://doi.org/10.3390/ma18204681 ER -
APA
A, E., H, P., A, K., K, S., J, Z., G, M., S, W., AR, J., & D, G. (2025). The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma18204681
Source records
- pubmed · retrieved 2026-09-25T11:43:55.968Z