Pushing the Detailed Balance Limit in III–V Semiconductor Photoconversion with Bandgap-Engineering Multijunction Architectures
- DOI
- 10.3390/ma19020413
- Published
- 2026-01-21
- Container
- Materials
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/ma19020413,
title = {Pushing the Detailed Balance Limit in III–V Semiconductor Photoconversion with Bandgap-Engineering Multijunction Architectures},
author = {Xing Gao and Yiming Yin and Boyu Yang and Chao Zhang and Wei Zhou and Jinchao Tong and Junhao Chu},
year = {2026},
journal = {Materials},
doi = {10.3390/ma19020413},
url = {https://doi.org/10.3390/ma19020413}
}RIS
TY - JOUR TI - Pushing the Detailed Balance Limit in III–V Semiconductor Photoconversion with Bandgap-Engineering Multijunction Architectures AU - Xing Gao AU - Yiming Yin AU - Boyu Yang AU - Chao Zhang AU - Wei Zhou AU - Jinchao Tong AU - Junhao Chu PY - 2026 JO - Materials DO - 10.3390/ma19020413 UR - https://doi.org/10.3390/ma19020413 ER -
APA
Gao, X., Yin, Y., Yang, B., Zhang, C., Zhou, W., Tong, J., & Chu, J. (2026). Pushing the Detailed Balance Limit in III–V Semiconductor Photoconversion with Bandgap-Engineering Multijunction Architectures. Materials. https://doi.org/10.3390/ma19020413
Source records
- crossref · retrieved 2026-09-27T05:47:08.744Z