Study on the Evolution Mechanism of Carbon Impurities in Polysilicon Production Based on HSC Simulation.

Hou Y, Lv X, Huang G

DOI: 10.3390/ma19040798
Published: 2026 Feb 18
Container: Materials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/ma19040798,
  title = {Study on the Evolution Mechanism of Carbon Impurities in Polysilicon Production Based on HSC Simulation.},
  author = {Hou Y and Lv X and Huang G},
  year = {2026},
  journal = {Materials (Basel, Switzerland)},
  doi = {10.3390/ma19040798},
  url = {https://doi.org/10.3390/ma19040798}
}

RIS

TY  - JOUR
TI  - Study on the Evolution Mechanism of Carbon Impurities in Polysilicon Production Based on HSC Simulation.
AU  - Hou Y
AU  - Lv X
AU  - Huang G
PY  - 2026
JO  - Materials (Basel, Switzerland)
DO  - 10.3390/ma19040798
UR  - https://doi.org/10.3390/ma19040798
ER  -

APA

Y, H., X, L., & G, H. (2026). Study on the Evolution Mechanism of Carbon Impurities in Polysilicon Production Based on HSC Simulation.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma19040798

Source records

pubmed · retrieved 2026-09-26T09:08:51.425Z