Effect of Duty Cycle on Amorphous Silicon Carbon Nitride Films Deposited by Microwave Sheath-Voltage Combination Plasma.

Tanaka I, Hatae Y, Harada Y

DOI: 10.3390/ma19040804
Published: 2026 Feb 19
Container: Materials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/ma19040804,
  title = {Effect of Duty Cycle on Amorphous Silicon Carbon Nitride Films Deposited by Microwave Sheath-Voltage Combination Plasma.},
  author = {Tanaka I and Hatae Y and Harada Y},
  year = {2026},
  journal = {Materials (Basel, Switzerland)},
  doi = {10.3390/ma19040804},
  url = {https://doi.org/10.3390/ma19040804}
}

RIS

TY  - JOUR
TI  - Effect of Duty Cycle on Amorphous Silicon Carbon Nitride Films Deposited by Microwave Sheath-Voltage Combination Plasma.
AU  - Tanaka I
AU  - Hatae Y
AU  - Harada Y
PY  - 2026
JO  - Materials (Basel, Switzerland)
DO  - 10.3390/ma19040804
UR  - https://doi.org/10.3390/ma19040804
ER  -

APA

I, T., Y, H., & Y, H. (2026). Effect of Duty Cycle on Amorphous Silicon Carbon Nitride Films Deposited by Microwave Sheath-Voltage Combination Plasma.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma19040804

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pubmed · retrieved 2026-09-26T07:33:23.352Z