Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering.

Weis M

DOI: 10.3390/ma19071424
Published: 2026 Apr 2
Container: Materials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/ma19071424,
  title = {Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering.},
  author = {Weis M},
  year = {2026},
  journal = {Materials (Basel, Switzerland)},
  doi = {10.3390/ma19071424},
  url = {https://doi.org/10.3390/ma19071424}
}

RIS

TY  - JOUR
TI  - Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering.
AU  - Weis M
PY  - 2026
JO  - Materials (Basel, Switzerland)
DO  - 10.3390/ma19071424
UR  - https://doi.org/10.3390/ma19071424
ER  -

APA

M, W. (2026). Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma19071424

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pubmed · retrieved 2026-09-26T14:23:48.434Z