Comparison of Kinetic and Fluid Simulation Models for RF Capacitively Coupled Plasmas in Semiconductor Processing.

Kim H, Lee MU, Lee HJ

DOI: 10.3390/ma19091900
Published: 2026 May 5
Container: Materials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/ma19091900,
  title = {Comparison of Kinetic and Fluid Simulation Models for RF Capacitively Coupled Plasmas in Semiconductor Processing.},
  author = {Kim H and Lee MU and Lee HJ},
  year = {2026},
  journal = {Materials (Basel, Switzerland)},
  doi = {10.3390/ma19091900},
  url = {https://doi.org/10.3390/ma19091900}
}

RIS

TY  - JOUR
TI  - Comparison of Kinetic and Fluid Simulation Models for RF Capacitively Coupled Plasmas in Semiconductor Processing.
AU  - Kim H
AU  - Lee MU
AU  - Lee HJ
PY  - 2026
JO  - Materials (Basel, Switzerland)
DO  - 10.3390/ma19091900
UR  - https://doi.org/10.3390/ma19091900
ER  -

APA

H, K., MU, L., & HJ, L. (2026). Comparison of Kinetic and Fluid Simulation Models for RF Capacitively Coupled Plasmas in Semiconductor Processing.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma19091900

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pubmed · retrieved 2026-09-24T20:03:58.398Z